CS5307 datasheet(5/24 Pages) ONSEMI

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CS5307

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ELECTRICAL CHARACTERISTICS (continued) (0°C < TA < 70°C; 0°C < TJ < 125°C; 9.5 V < VCC < 14 V; CGATEx = 100 pF,

CCOMP = 0.01μF, CSS = 0.1μF, CVCC = 0.1μF, RROSC = 32.4 kΩ, VOCSET = 0.54 V, DAC Code 01110; unless otherwise stated.)

Parameter

Unit

Max

Typ

Min

Test Conditions

Voltage Identification DAC (0 = Connected to GND, 1 = Open or Pull−Up to Internal 3.3 V or External Voltage 12 V) (continued)

Pull−Up Voltage

1.0 MΩ to GND

2.5

2.7

3.0

Power Good Output

Upper Threshold

Force PWRGDS

1.876 (−5%)

1.975

2.074 (+5%)

Lower Threshold

Force PWRGDS

−5%

VID/2

+5%

Switch Leakage Current

VCC = 14 V, PWRGDS = 1.4 V

−

0.1

1.0

μA

Delay

PWRGDS low to PWRGD low

100

800

2000

μs

Output Low Voltage

PWRGDS = 1.0 V,

IPWRGD = 4.0 mA

−

0.15

0.4

Voltage Feedback Error Amplifier

VFB Bias Current

Note 2

9.9

10.25

10.6

μA

Comp Source Current

COMP = 0.5 V to 2.0 V,

VFB = 1.8 V, DAC = 00000

μA

Comp Sink Current

COMP = 0.5 V to 2.0 V,

VFB = 1.15 V, DAC = 11110

μA

Transconductance

−10 μA < ICOMP < +10 μA, Note 3

200

500

750

μmho

Output Impedance

−

2.5

−

MΩ

Open Loop DC Gain

Note 3

−

Unity Gain Bandwidth

−

kHZ

PSRR @ 1.0 kHz

−

COMP Max Voltage

VFB = 0 V

2.4

2.7

−

COMP Min Voltage

VFB = 1.6 V

−

150

PWM Comparators

Minimum Pulse Width

Measured from CSx to GATEx,

VFB = CSREF = 0.5 V,

COMP = 0.5 V,

60 mV step on CSx;

measure at GATEx = 1.0 V

−

Transient Response Time

Measured from CSREF to GATEx,

COMP = 2.1 V,

CSx = CSREF = 0.5 V,

CSREF stepped

from 1.2 V − 2.0 V

−

Channel Start−Up Offset

CSx = CSREF = VFB = 0 V,

measure VCOMP when GATEx

switch high

350

600

750

Artificial Ramp Amplitude

50% Duty Cycle, Note 3

−

115

−

Gates

High Voltage

Measure GATEx

IGATEx = 1.0 mA

2.0

2.6

3.0

Low Voltage

Measure GATEx, IGATEx = 1.0 mA

−

0.5

0.7

2. The VFB Bias Current changes with the value of ROSC per Figure 4.

3. Guaranteed by design. Not tested in production.

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