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TND314S Datasheet(PDF) 1 Page - ON Semiconductor

Part # TND314S
Description  Excellent Power Device
PDF  8 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TND314S Datasheet(HTML) 1 Page - ON Semiconductor

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92612 TKIM TC-00002820/D0606IP TIIM TB-00001538 No. A0420-1/8
http://onsemi.com
Semiconductor Components Industries, LLC, 2013
August, 2013
TND314S
Excellent Power Device
Dual inverter driver for general purpose, Dual SOIC8
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Features
•
Dual inverter
•
Monolithic structure (High voltage CMOS process adopted)
•
Withstand voltage of 25V is assured
•
Wide range of operating voltage : 4.5V to 25V
•
Peak output current : 1A
•
Fast switching time (25ns typical at 1000pF load)
•
Fully compatible input to TTL / CMOS (VIH=up to 2.6V, at VDD=4.5 to 25V)
•
Built-in input pull-down resistance
•
Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
VDD
0 to 25
V
Input Voltage
VIN
GND--0.3 to VDD+0.3
V
Allowable Power Dissipation
PD max
0.3
W
Junction Temperature
Tj
--55 to +150
°C
Storage Temperature
Tstg
--55 to +150
°C
Package Dimensions
unit : mm (typ)
7072-005
Ordering number : ENA0420A
Product & Package Information
• Package
: SOIC8
• JEITA, JEDEC
: SC-87, SOT-96
• Minimum Packing Quantity : 2,500 pcs./reel
Packing Type: TL
Marking
Block Diagram
4.9
0.22
14
5
8
0.445
1.27
0.254 (GAGE PLANE)
1 : NC
2 : IN A
3 : GND
4 : IN B
5 : OUT B
6 : VDD
7 : OUT A
8 : NC
SOIC8
TL
TND
LOT No.
314
TND314S-TL-2H
VDD
IN
OUT
GND


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