SSS1206 datasheet(2/7 Pages) GOOD-ARK

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SSS1206

120V N-Channel MOSFET

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Page 2 of 7

Rev.1.0

Thermal Resistance

Symbol

Characteristics

Typ.

Max.

Units

RθJC

Junction-to-case ③

—

0.4

°C/W

Junction-to-ambient (t ≤ 10s) ④

—

°C/W

RθJA

Junction-to-Ambient (PCB mounted, steady-state) ④

—

°C/W

Electrical Characteristics @TA=25℃ unless otherwise specified

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)DSS

Drain-to-Source breakdown voltage

120

—

VGS = 0V, ID= 1mA

—

4.0

6.0

VGS=10V,ID =75A

RDS(on)

Static Drain-to-Source on-resistance

—

9.0

—

mΩ

TJ = 125°C

2.0

—

VDS = VGS, ID =250μA

VGS(th)

Gate threshold voltage

—

2.2

—

TJ = 125°C

—

VDS =120V,VGS = 0V

IDSS

Drain-to-Source leakage current

—

μA

TJ = 125°C

—

100

VGS =20V

IGSS

Gate-to-Source forward leakage

—

-100

VGS = -20V

Total gate charge

—

224

—

Qgs

Gate-to-Source charge

—

Qgd

Gate-to-Drain("Miller") charge

—

ID = 50A,

VDS=50V,

VGS = 10V

td(on)

Turn-on delay time

—

Rise time

—

141

—

td(off)

Turn-Off delay time

—

Fall time

—

101

—

VGS=10V, VDD =65V,

RL=0.87Ω,

RGEN=2.6Ω

ID =75A

Ciss

Input capacitance

—

5634

—

Coss

Output capacitance

—

657

—

Crss

Reverse transfer capacitance

—

12.6

—

VGS = 0V

VDS = 50V

ƒ = 1MHz

Source-Drain Ratings and Characteristics

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

180 ①

ISM

Pulsed Source Current

(Body Diode)

—

670

MOSFET symbol

showing

the

integral reverse

p-n junction diode.

Diode Forward Voltage

—

0.9

1.3

IS=75A, VGS=0V, TJ = 25°C

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