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ACE5830 Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE5830 Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 6 page ![]() ACE5830 DFNWB2X2-6L N-Channel MOSFETS VER 1.1 1 Description DFNWB2×2-6L parts are shipped in tape . The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti–static sprayed agent . These reeled parts in standard option are shipped with 3,000 units per 7” or 18.0cm diameter reel . The reels are clear in color and is made of polystyrene plastic(anti-static coated). Features • Trench FET Power MOSFET • Low R DS(ON) • Typical ESD Protection Applications • Ideal for Load Swith and Battery • Protection Applications Absolute Maximum Ratings (Ta=25 ℃ unless otherwise noted) *Repetitive rating:Pluse width limited by junction temperature. Packaging Type DFNWB2*2-6L N-Channel Parameter Symbol Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±10 V Continuous Drain Current ID 5 A Pulsed Drain Current IDM* 20 A Thermal Resistance from Junction to Ambient RθJA 250 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+150 ℃ |
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