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SSFN2269 Datasheet(PDF) 1 Page - GOOD-ARK Electronics |
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SSFN2269 Datasheet(HTML) 1 Page - GOOD-ARK Electronics |
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1 / 4 page ![]() SSFN2269 20V Dual P-Channel MOSFET www.goodark.com Page 1 of 4 Rev.1.1 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity SSFN2269 SSFN2269 DFN2X2-6L - - - ABSOLUTE MAXIMUM RATINGS (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V ID -3.3 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM -20 A Maximum Power Dissipation PD 1.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 83 /W ℃ GENERAL FEATURES ● VDS = -20V,ID =-3.3A RDS(ON) < 90mΩ @ VGS=-4.5V RDS(ON) < 120mΩ @ VGS=-2.5V ● High Power and current handing capability ● Lead free product ● Surface Mount Package APPLICATIONS ●Battery protection ●Load switch ●Power management Marking and Pin Assignment DFN2X2-6L DESCRIPTION The SSFN2269 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. Schematic Diagram |
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Similar Description - SSFN2269 |
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