SSF8205 datasheet(2/8 Pages) GOOD-ARK

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SSF8205

20V Dual N-Channel MOSFET

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Page 2 of 8

Rev.1.0

Electrical Characteristics @TA=25℃ unless otherwise specified

Parameter

Symbol

Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V ID=250μA

Zero Gate Voltage Drain Current

IDSS

VDS=20V,VGS=0V

μA

Gate-Body Leakage Current

IGSS

VGS=±10V,VDS=0V

±100

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.5

0.8

1.2

VGS=4V, ID=4A

mΩ

Drain-Source On-State Resistance

RDS(ON)

VGS=2.5V, ID=3A

mΩ

Forward Transconductance

gFS

VDS=5V,ID=4A

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

Clss

800

Output Capacitance

Coss

155

Reverse Transfer Capacitance

Crss

VDS=8V,VGS=0V,

F=1.0MHz

125

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

td(on)

18.3

Turn-on Rise Time

4.8

Turn-Off Delay Time

td(off)

43.5

Turn-Off Fall Time

VDD=10V,ID=1A

VGS=4V,RGEN=10Ω

Total Gate Charge

Gate-Source Charge

Qgs

2.2

Gate-Drain Charge

Qgd

VDS=10V,ID=4A,

VGS=4V

2.5

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=2A

0.8

1.2

Diode Forward Current (Note 2)

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