Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.3

2

NCE40H21

Pb Free Product

http://www.ncepower.com

Single pulse avalanche energy

(Note 5)

1800

mJ

Operating Junction and Storage Temperature Range

-55 To 175

℃

Thermal Characteristic

Thermal Resistance,Junction-to-Case

(Note 2)

0.48

/W

℃

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

40

-

V

Zero Gate Voltage Drain Current

-

-

1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

2

2.7

4

V

Drain-Source On-State Resistance

-

1.6

2.2

mΩ

Forward Transconductance

160

-

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

9500

-

PF

Output Capacitance

-

1300

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

1000

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

40

-

nS

Turn-on Rise Time

-

38

-

nS

Turn-Off Delay Time

-

140

-

nS

Turn-Off Fall Time

VDD=30V,ID=2A,RL=15Ω,

RG=2.5Ω,VGS=10V

-

60

-

nS

Total Gate Charge

-

250

-

nC

Gate-Source Charge

-

48

-

nC

Gate-Drain Charge

ID=30A,VDD=30V,VGS=10V

-

98

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

0.85

1.2

V

Diode Forward Current

(Note 2)

-

-

210

A

Reverse Recovery Time

-

48

nS

Reverse Recovery Charge

Qrr

TJ = 25°C, IF = 40A

di/dt = 100A/μs

(Note3)

-

78

nC

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production