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NCE2011E Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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NCE2011E Datasheet(HTML) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd |
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1 / 7 page  Wuxi NCE Power Semiconductor Co., Ltd Page v1.0 1 NCE2011E Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested. General Features ● VDS = 20V,ID =11A RDS(ON) < 7mΩ @ VGS=2.5V RDS(ON) < 9mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Application ● PWM application ● Load switch Schematic diagram Marking and pin assignment TSSOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 2011E NCE2011E TSSOP-8 Ø330mm 12mm 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V Drain Current-Continuous ID 11 A Drain Current-Pulsed (Note 1) IDM 44 A Maximum Power Dissipation PD 1.6 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 78 /W ℃ Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Off Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 - V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V - - 1 μA |
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