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BAV99 Datasheet(PDF) 1 Page - CHENG-YI ELECTRONIC CO., LTD. |
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BAV99 Datasheet(HTML) 1 Page - CHENG-YI ELECTRONIC CO., LTD. |
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1 / 3 page  SOT–23 3 CAHODE/ANODE 1 ANODE 2 CATHODE MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit Reverse Voltage V R 70 Vdc Forward Current I F 215 mAdc Peak Forward Surge Current I FM(surge) 500 mAdc Repetitive Peak Reverse Voltage V RRM 70 V Average Rectified Forward Current (1) I F(AV) 715 mA (averaged over any 20 ms period) Repetitive Peak Forward Current I FRM 450 mA Non–Repetitive Peak Forward Current I FSM A t = 1.0 µ s 2.0 t = 1.0 ms 1.0 t = 1.0 S 0.5 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P D 225 mW FR–5 Board, (1) T A = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance Junction to Ambient R θJA 556 °C/W Total Device Dissipation P D 300 mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature T J , T stg –65 to +150 °C ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage(I (BR) = 100 µA) V (BR) 70 — Vdc Reverse Voltage Leakage Current (V R = 70 Vdc) I R — 2.5 µAdc (V R = 25 Vdc, T J = 150°C) –– 30 (V R = 70 Vdc, T J = 150°C) –– 50 Diode Capacitance C D — 1.5 pF (V R = 0, f = 1.0 MHz) Forward Voltage (I F = 1.0 mAdc) V F –– 715 mVdc (I F = 10 mAdc) — 855 (I F = 50 mAdc) –– 1000 (I F = 150 mAdc) –– 1250 Reverse Recovery Time (I F = I R = 10 mAdc, i R(REC) = 1.0 mAdc, R L = 100 Ω ) (Figure 1) t rr — 6.0 ns Forward Recovery Voltage (I F = 10 mA, t r = 20 ns) V FR — 1.75 V 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. . BAV99 A7 3000 Tape & Reel Device Marking Shipping DEVICE MARKING ORDERING INFORMATION PB FREE PRODUCT BAV99 DUAL SWITCHING DIODE |
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