ECH8653 datasheet(2/7 Pages) ONSEMI

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Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

Zero-Gate Voltage Drain Current

IDSS

VDS=20V, VGS=0V

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

1.0

2.4

Forward Transfer Admittance

| yfs |

VDS=10V, ID=4A

3.4

5.8

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=4A, VGS=8V

91420

mΩ

RDS(on)2

ID=4A, VGS=4V

mΩ

Input Capacitance

Ciss

VDS=10V, f=1MHz

1280

Output Capacitance

Coss

170

Reverse Transfer Capacitance

Crss

105

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

Rise Time

Turn-OFF Delay Time

td(off)

Fall Time

Total Gate Charge

VDS=10V, VGS=8V, ID=7.5A

18.5

Gate-to-Source Charge

Qgs

2.7

Gate-to-Drain “Miller” Charge

Qgd

3.1

Diode Forward Voltage

VSD

IS=7.5A, VGS=0V

0.82

1.2

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ECH8653-TL-H

ECH8

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

ID=4A

RL=2.5Ω

VDD=10V

VOUT

ECH8653

VIN

ECH8653

No. A0851-2/7

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