CEP14P20 datasheet(2/4 Pages) CET

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Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

0.36

0.30

-2

-4

-100

100

-1

Ω

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = -250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

Typ

Max

-200

VDS = -200V, VGS = 0V

VGS = 30V, VDS = 0V

VGS = -30V, VDS = 0V

VGS = VDS, ID = -250µA

VGS = -10V, ID = -6.8A

VDD = -100V, ID = -13.5A,

VGS = -10V, RGEN = 25Ω

VDS = -25V, VGS = 0V,

f = 1.0 MHz

1620

240

260

120

-13.5

-1.5

148

520

240

VDS = -160V, ID = -13.5A,

VGS = -10V

CEP14P20/CEB14P20

CEF14P20

IS f

VSD

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature .

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .

c.Guaranteed by design, not subject to production testing.

d.Limited only by maximum temperature allowed .

e.Pulse width limited by safe operating area .

f.Full package IS(max) = 7.4A .

g.Full package VSD test condition IS = 7.4A .

h.L = 3mH, IAS =13.5A, VDD = 25V, RG = 25Ω, Starting TJ = 25 C.

VGS = 0V, IS = -13.5A g

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