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NCE1507IA Datasheet(PDF) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

Part # NCE1507IA
Description  NCE N-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
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Manufacturer  NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]
Direct Link  http://www.ncepower.com
Logo NCEPOWER - Wuxi NCE Power Semiconductor Co., Ltd

NCE1507IA Datasheet(HTML) 2 Page - Wuxi NCE Power Semiconductor Co., Ltd

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Wuxi NCE Power Semiconductor Co., Ltd
Page
v1.0
2
NCE1507IA
Pb Free Product
http://www.ncepower.com
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
150
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=150V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.5
2
2.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=5A
-
255
290
mΩ
Forward Transconductance
gFS
VDS=15V,ID=1.5A
-
3
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
235
-
PF
Output Capacitance
Coss
-
36
-
PF
Reverse Transfer Capacitance
Crss
VDS=25V,VGS=0V,
F=1.0MHz
-
20
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
8
-
nS
Turn-on Rise Time
tr
-
10
-
nS
Turn-Off Delay Time
td(off)
-
20
-
nS
Turn-Off Fall Time
tf
VDD=75V,ID=1A,RL=75Ω
VGS=10V,RG=6Ω
-
15
-
nS
Total Gate Charge
Qg
-
8
nC
Gate-Source Charge
Qgs
-
1.4
-
nC
Gate-Drain Charge
Qgd
VDS=75V,ID=1.5A,
VGS=10V
-
2.1
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=2A
-
-
1.2
V
Diode Forward Current
(Note 2)
IS
-
-
7
A



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