CEP5175 datasheet(2/4 Pages) CET

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CEP5175/CEB5175

Electrical Characteristics Tc = 25 C unless otherwise noted

Parameter

Symbol

Min

Units

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Gate Body Leakage Current, Forward

Gate Threshold Voltage

Static Drain-Source

On-Resistance

BVDSS

IDSS

IGSSR

IGSSF

-1

-3

-100

100

-1

mΩ

Gate Body Leakage Current, Reverse

On Characteristics b

Dynamic Characteristics c

Input Capacitance

Reverse Transfer Capacitance

Output Capacitance

Switching Characteristics c

Turn-On Delay Time

Turn-Off Fall Time

Turn-Off Delay Time

Turn-On Rise Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Drain-Source Diode Characteristics and Maximun Ratings

Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage b

Test Condition

VGS = 0V, ID = -250µA

VGS(th)

RDS(on)

Ciss

Coss

Crss

td(on)

td(off)

Qgs

Qgd

VSD

Typ

Max

-55

VDS = -55V, VGS = 0V

VGS = 20V, VDS = 0V

VGS = -20V, VDS = 0V

VGS = VDS, ID = -250µA

VGS = -10V, ID = -20A

VGS = -4.5V, ID = -10A

VDD = -45V, ID = -20A,

VGS = -10V, RGEN = 6Ω

VDS = -45V, ID = -20A,

VGS = -4.5V

VDS = -25V, VGS = 0V,

f = 1.0 MHz

VGS = 0V, IS = -20A

3435

315

155

175

-50

-1.2

mΩ

Notes :

a.Repetitive Rating : Pulse width limited by maximum junction temperature.

b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

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