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3KW Datasheet(PDF) 1 Page - DIOTEC Electronics Corporation |
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3KW Datasheet(HTML) 1 Page - DIOTEC Electronics Corporation |
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1 / 1 page ![]() MECHANICAL SPECIFICATION MAXIMUMRATINGS&ELECTRICAL CHARACTERISTICS DataSheetNo.BPTD-3000D-1A POWEROVERETHERNET(PoE) EQUIPMENTPROTECTION 3.0KP BIPOLARTRANSIENTVOLTAGESUPPRESSORDIODECELLS Tel.:(310)767-1052Fax:(310)767-7958 DIOTECELECTRONICSCORP Gardena,CA 90248U.S.A 18020HobartBlvd.,UnitB Breakdown Voltage (I = 100 mA dc, Tc = 25 C) R o PARAMETER(TESTCONDITIONS) Maximum Recurrent Peak Reverse Voltage Non-repetitive Peak Forward Surge Current (Half wave, Single phase, 60 Hz sine applied to rated load) Repetitive Peak Reverse Surge Current (Time constant = 10 mSec Duty cycle < 1.0%, Tc = 25 C) o Average Rectified Forward Current (Single phase, Resistive load, 60 Hz) Maximum Thermal Resistance, Junction to Slug (Note 1) Junction Operating & Storage Temperature Range Maximum DC Reverse Current (V = 20V DC, Tc = 25 C) R O Instantaneous Forward Voltage (I = 80A @300 Sec pulse, T = 25 C) F C m o Maximum DC Blocking Voltage Working Peak Reverse Voltage Series Number IR RGJC T ,T J STG V(BR) VRWM VDC VRRM SYMBOL 24 Min / 32 Max 200 0.8 -65 to +175 110 500 1.05 23 35 TVS3527D RATINGS VOLTS °C/W °C AMPS UNITS VOLTS nA IO IRSM IFSM 3.01 tvs35d 1.00 Maximum Typical Notes: 1) Single Side Cooled B A C Passivation Proprietary Junction Silver Plated Copper Slugs Silicon Die DieSize: 0.185"Dia. Round DIM A B C INCHES +/- NOM 0.215 0.190 0.083 0.003 0.003 0.004 Ratings at 25 °C ambient temperature unless otherwise specified. PARAMETER Series Number SYMBOL RATINGS IT Test Current (To Determine V ) BR Breakdown Voltage (Cells Begin to Conduct) (See Note 1) VBR UNITS BP3-23 2.0 33 (Max) 91 Min AMPS 20 2 VOLTS mA AMPS 37.5 Max VOLTS 800 Min 23.3 Min +/- 5% FEATURES MECHANICAL DATA RoHSCOMPLIANT VOIDFREEVACUUMDIESOLDERINGForLowest Electrical/ThermalResistance AndMaximum MechanicalStrength&HeatDissipation (SolderVoids:Typical<2%,Max.<10%ofDie Area) RoundDieForHighPowerHeavyDutyPerformance HighHeatHandlingCapabilityWithVeryLow ThermalStress ProprietaryJunctionPassivationForSuperior Reliability AndPerformance Finish: SolderingTemperature:282 Cmaximum MountingPosition: Any Polarity:Bipolar o Allexternalsurfacesaresilverplatedforcorrosion resistancesuperiorsolderability Reverse Stand Off Voltage (Voltage at Which I Measured) R Clamping Voltage During a 10/1000 Transient mS Maximum Current Conducted During a Transient 10/1000 S m VWM IPPM(10) Maximum Current Conducted at VWM IR Maximum Current Conducted During 8/20 S Transient m IPPM(8) VC(8) Clamping Voltage During 8/20 S Transient m VC(10) FEATURES MECHANICAL DATA RoHSCOMPLIANT LowestElectrical&ThermalResistance-Ideally SuitedForPreventingOvervoltage/Overcurrent DamagetoPoweroverEthernet(PoE)Equipment VOIDFREEVACUUMDIESOLDERINGForLowest Electrical/ThermalResistance AndMaximum MechanicalStrength&HeatDissipation (SolderVoids:Typical<2%,Max.<10%ofDie Area) RoundDieForHighPowerHeavyDutyPerformance HighHeatHandlingCapabilityWithVeryLow ThermalStress ProprietaryJunctionPassivationForSuperior Reliability AndPerformance Finish: SolderingTemperature:282 Cmaximum MountingPosition: Any Polarity:Bipolar o Allexternalsurfacesaresilverplatedforcorrosion resistancesuperiorsolderability Notes: (1) Diode cell breakdown voltage can be tailored to meet your specific application requirements. Please Contact Us for details. |
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