61312 TKIM/52709PA MSIM TC-00001968 No. A1479-1/7

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

July, 2013

ATP102

P-Channel Power MOSFET

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1 : Gate

2 : Drain

3 : Source

4 : Drain

ATPAK

0.4

0.55

13

2

6.5

0.6

4

0.8

1.5

0.4

2.6

4.6

0.4

2.3

2.3

Features

•

Low ON-resistance

•

Large current

•

Slim package

•

4.5V drive

•

Halogen free compliance

•

Protection diode in

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

--30

V

Gate-to-Source Voltage

VGSS

±20

V

Drain Current (DC)

ID

--40

A

Drain Current (PW≤10μs)

IDP

PW≤10μs, duty cycle≤1%

--120

A

Allowable Power Dissipation

PD

Tc=25°C40

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

58

mJ

Avalanche Current *2

IAV

20

A

Note :

*1 VDD=10V, L=200μH, IAV=20A

*2 L≤200μH, Single pulse

Package Dimensions

unit : mm (typ)

7057-001

Ordering number : ENA1479A

ATP102-TL-H

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

Marking

Electrical Connection

TL

ATP102

LOT No.

1

3

4,2