ECH8308 datasheet(2/7 Pages) ONSEMI

2 / 7 page

ECH8308

No. A1182-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--12

Zero-Gate Voltage Drain Current

IDSS

VDS=--12V, VGS=0V

--10

μA

Gate-to-Source Leakage Current

IGSS

VGS=±8V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--6V, ID=--1mA

--0.4

--1.3

Forward Transfer Admittance

| yfs |

VDS=--6V, ID=--4.5A

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--4.5A, VGS=--4.5V

9.2

12.5

mΩ

RDS(on)2

ID=--2A, VGS=--2.5V

mΩ

RDS(on)3

ID=--1A, VGS=--1.8V

mΩ

Input Capacitance

Ciss

VDS=--6V, f=1MHz

2300

Output Capacitance

Coss

720

Reverse Transfer Capacitance

Crss

550

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

Rise Time

130

Turn-OFF Delay Time

td(off)

230

Fall Time

195

Total Gate Charge

VDS=--6V, VGS=--4.5V, ID=--10A

Gate-to-Source Charge

Qgs

4.0

Gate-to-Drain “Miller” Charge

Qgd

7.1

Diode Forward Voltage

VSD

IS=--10A, VGS=0V

--0.79

--1.2

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ECH8308-TL-H

ECH8

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

ID= --5A

RL=1.2Ω

VDD= --6V

VOUT

ECH8308

VIN

--4.5V

VIN

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