© Semiconductor Components Industries, LLC, 2000

September, 2004 − Rev. XXX

1

Publication Order Number:

MMDF3N06HD/D

MMDF3N06HD

Preferred Device

Advance Information

Power MOSFET

3 Amps, 60 Volts

N−Channel SO−8, Dual

true logic level performance. Dual MOSFET devices are designed for

use in low voltage, high speed switching applications where power

efficiency is important. Typical applications are dc−dc converters, and

power management in portable and battery powered products such as

computers, printers, cellular and cordless phones. They can also be

used for low voltage motor controls in mass storage products such as

disk drives and tape drives.

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

60

Vdc

Gate−to−Source Voltage − Continuous

± 20

Vdc

3.3

16.5

Adc

Apk

1.7

Adc

(Note 1.)

2.0

Watts

Operating and Storage Temperature Range

− 55 to

150

°C

Single Pulse Drain−to−Source Avalanche

105

mJ

Thermal Resistance − Junction−to−Ambient

62.5

°C/W

Maximum Lead Temperature for Soldering

Purposes, 1/8

″ from case for 10 seconds

260

°C

1. Mounted on G10/FR4 glass epoxy board using minimum recommended

footprint.

This document contains information on a new product. Specifications and information

herein are subject to change without notice.

Source−1

1

2

3

4

8

7

6

5

Top View

Gate−1

Source−2

Gate−2

Drain−1

Drain−1

Drain−2

Drain−2

1

8

Device

Package

Shipping

ORDERING INFORMATION

MMDF3N06HDR2

SO−8

2500 Tape & Reel

SO−8, Dual

CASE 751

STYLE 11

http://onsemi.com

N−Channel

LYWW

MARKING

DIAGRAM

D

S

G

D3N06

L

= Location Code

Y

= Year

WW

= Work Week

PIN ASSIGNMENT

3 AMPERES

60 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

D

S

G