ATP302 datasheet(2/7 Pages) ONSEMI

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ATP302

No. A1654-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--60

Zero-Gate Voltage Drain Current

IDSS

VDS=--60V, VGS=0V

--10

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--1.2

--2.6

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--35A

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--35A, VGS=--10V

mΩ

RDS(on)2

ID=--35A, VGS=--4.5V

mΩ

Input Capacitance

Ciss

VDS=--20V, f=1MHz

5400

Output Capacitance

Coss

500

Reverse Transfer Capacitance

Crss

370

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

Rise Time

430

Turn-OFF Delay Time

td(off)

420

Fall Time

500

Total Gate Charge

VDS=--36V, VGS=--10V, ID=--70A

115

Gate-to-Source Charge

Qgs

Gate-to-Drain “Miller” Charge

Qgd

Diode Forward Voltage

VSD

IS=--70A, VGS=0V

--1.0

--1.5

Switching Time Test Circuit

Avalanche Resistance Test Circuit

Ordering Information

Device

Package

Shipping

memo

ATP302-TL-H

ATPAK

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

ID= --35A

RL=1.03Ω

VDD= --36V

VOUT

VIN

--10V

VIN

ATP302

50Ω

--10V

≥50Ω

VDD

ATP302

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