© Semiconductor Components Industries, LLC, 2006

August, 2006 − Rev. 1

1

Publication Order Number:

IRF830/D

IRF830

Power Field Effect

Transistor

N−Channel Enhancement Mode

Silicon Gate TMOS

This TMOS Power FET is designed for high voltage, high speed

power switching applications such as switching regulators, converters,

solenoid and relay drivers.

Temperature

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain−Source Voltage

500

Vdc

500

Vdc

Gate−Source Voltage

"20

Vdc

Drain Current

4.5

3.0

18

Adc

Derate above 25°C

75

0.6

Watts

W/°C

Operating and Storage

Temperature Range

−55 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance

— Junction−to−Case

— Junction−to−Ambient

1.67

62.5

°C/W

Maximum Lead Temperature for

Soldering Purposes, 1/8″ from Case

for 5 Seconds

300

°C

See the MTM4N45 Data Sheet for a complete set of design curves for the

product on this data sheet. Design curves of the MTP4N45 are applicable for

this product.

TMOS POWER FET

4.5 AMPERES, 500 VOLTS

Device

Package

Shipping

ORDERING INFORMATION

IRF830

TO−220AB

50 Units/Rail

TO−220AB

CASE 221A

STYLE 5

1

2

3

4

PIN ASSIGNMENT

1

2

3

Source

Gate

Drain

4

Drain

http://onsemi.com

®

N−Channel

D

S

G