MTP3055VL datasheet(2/7 Pages) ONSEMI

2 / 7 page

MTP3055VL

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 μAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 60 Vdc, VGS = 0 Vdc)

(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)

IDSS

−

100

μAdc

Gate−Body Leakage Current (VGS = ±15 Vdc, VDS = 0)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(VDS = VGS, ID = 250 μAdc)

Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.6

3.0

2.0

−

Vdc

mV/°C

Static Drain−Source On−Resistance (VGS = 5.0 Vdc, ID = 6.0 Adc)

RDS(on)

−

0.12

0.18

Ohm

Drain−Source On−Voltage (VGS = 5.0 Vdc)

(ID = 12 Adc)

(ID = 6.0 Adc, TJ = 150°C)

VDS(on)

−

1.6

−

2.6

2.5

Vdc

Forward Transconductance (VDS = 8.0 Vdc, ID = 6.0 Adc)

gFS

5.0

8.8

−

mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 25 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

−

410

570

Output Capacitance

Coss

−

114

160

Reverse Transfer Capacitance

Crss

−

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 30 Vdc, ID = 12 Adc,

VGS = 5.0 Vdc,

RG = 9.1 Ω)

td(on)

−

9.0

Rise Time

−

190

Turn−Off Delay Time

td(off)

−

Fall Time

−

Gate Charge

(See Figure 8)

(VDS = 48 Vdc, ID = 12 Adc,

VGS = 5.0 Vdc)

−

8.1

−

1.8

−

4.2

−

3.8

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage (Note 1)

(IS = 12 Adc, VGS = 0 Vdc)

(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)

VSD

−

0.97

0.86

1.3

−

Vdc

Reverse Recovery Time

(See Figure 14)

(IS = 12 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs)

trr

−

55.7

−

18.7

−

Reverse Recovery Stored

Charge

QRR

−

0.116

−

μC

INTERNAL PACKAGE INDUCTANCE

Internal Drain Inductance

(Measured from contact screw on tab to center of die)

(Measured from the drain lead 0.25″ from package to center of die)

−

3.5

4.5

−

Internal Source Inductance

(Measured from the source lead 0.25″ from package to source bond pad)

−

7.5

−

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperature.

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