ECH8315

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2

ELECTRICAL CHARACTERISTICS at Ta

Parameter

Symbol

Conditions

Value

Unit

min

typ

max

Drain to Source Breakdown Voltage

V(BR)DSS

ID=1mA, VGS=0V

30

V

Zero-Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

1

A

Gate to Source Leakage Current

IGSS

VGS=16V, VDS=0V

10

A

Gate Threshold Voltage

VGS(th)

VDS=10V, ID=1mA

1.2

2.6

V

Forward Transconductance

gFS

VDS=10V, ID=3.5A

5

8.4

S

Static Drain to Source On-State

Resistance

RDS(on)1

ID=3.5A, VGS=10V

19

25

m



RDS(on)2

ID=2A, VGS=4.5V

31

44

m



RDS(on)3

ID=2A, VGS=4V

35

49

m



Input Capacitance

Ciss

VDS=10V, f=1MHz

875

pF

Output Capacitance

Coss

200

pF

Reverse Transfer Capacitance

Crss

150

pF

Turn-ON Delay Time

td(on)

See specified Test Circuit

8.1

ns

Rise Time

tr

33

ns

Turn-OFF Delay Time

td(off)

92

ns

Fall Time

tf

60

ns

Total Gate Charge

Qg

VDS=15V, VGS=10V, ID=7.5A

18

nC

Gate to Source Charge

Qgs

2.1

nC

Gate to Drain “Miller” Charge

Qgd

4.7

nC

Forward Diode Voltage

VSD

IS=7.5A, VGS=0V

0.82

1.2

V

Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.

Switching Time Test Circuit

PW=10

s

D.C.≤1%

P.G

50



G

S

D

ID=--3.5A

RL=4.3

VDD= --15V

VOUT

VIN

0V

--10V

VIN

ECH8315