MMSF1308 datasheet(2/9 Pages) ONSEMI

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MMSF1308

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

(VGS = 0 Vdc, ID = 0.25 mAdc)

Temperature Coefficient (Positive)

V(BR)DSS

−

Vdc

mV/°C

Zero Gate Voltage Drain Current

(VDS = 30 Vdc, VGS = 0 Vdc)

(VDS = 30 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

−

1.0

μAdc

Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)

IGSS

−

100

nAdc

ON CHARACTERISTICS (Note 1)

Gate Threshold Voltage

(VDS = VGS, ID = 0.25 mAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

−

1.6

4.3

2.5

−

Vdc

mV/°C

Static Drain−to−Source On−Resistance

(VGS = 10 Vdc, ID = 7.0 Adc)

(VGS = 4.5 Vdc, ID = 3.5 Adc)

RDS(on)

−

mΩ

Forward Transconductance (VDS = 5.0 Vdc, ID = 1.0 Adc) (Note 1)

gFS

−

4.5

−

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(VDS = 24 Vdc, VGS = 0 V,

f = 1.0 MHz)

Ciss

−

690

970

Output Capacitance

Coss

−

290

410

Transfer Capacitance

Crss

−

130

SWITCHING CHARACTERISTICS (Note 2)

Turn−On Delay Time

(VDD = 21 Vdc, ID = 7.0 Adc,

VGS = 10 Vdc,

RG = 6.0 Ω) (Note 1)

td(on)

−

7.5

Rise Time

−

Turn−Off Delay Time

td(off)

−

Fall Time

−

Gate Charge

(VDS = 15 Vdc, ID = 7.0 Adc,

VGS = 10 Vdc) (Note 1)

−

2.5

−

6.0

−

8.0

−

SOURCE−DRAIN DIODE CHARACTERISTICS

Forward On−Voltage

(IS = 7.0 Adc, VGS = 0 Vdc) (Note 1)

(IS = 7.0 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

−

0.85

0.71

1.0

−

Vdc

Reverse Recovery Time

(IS = 7.0 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/μs) (Note 1)

trr

−

Reverse Recovery Stored Charge

QRR

−

0.03

−

μC

1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.

2. Switching characteristics are independent of operating junction temperatures.

3. Reflects typical values.

Cpk =

Max limit − Typ

3 x SIGMA

4. Repetitive rating; pulse width limited by maximum junction temperature.

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