NTMFS4H01NF datasheet(2/7 Pages) ONSEMI

2 / 7 page

NTMFS4H01NF

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/

ID = 10 mA reference to 25°C

mV/

°C

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 20 V

TJ = 25°C

500

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = +20 V

+100

ON CHARACTERISTICS (Note 5)

Gate Threshold Voltage

VGS(TH)

VGS = VDS, ID = 250 mA

1.2

2.1

Negative Threshold Temperature Coefficient

VGS(TH)/TJ

ID = 10 mA reference to 25°C

3.7

mV/

°C

Drain−to−Source On Resistance

RDS(on)

VGS = 10 V

ID = 30 A

0.56

0.7

VGS = 4.5 V

ID = 30 A

0.79

Forward Transconductance

gFS

VDS = 12 V, ID = 20 A

101

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

CISS

VGS = 0 V, f = 1 MHz, VDS = 12 V

5538

Output Capacitance

COSS

3416

Reverse Transfer Capacitance

CRSS

175.3

Total Gate Charge

QG(TOT)

VGS = 4.5 V, VDS = 12 V; ID = 30 A

37.8

Threshold Gate Charge

QG(TH)

2.3

Gate−to−Source Charge

QGS

11.8

Gate−to−Drain Charge

QGD

Total Gate Charge

QG(TOT)

VGS = 10 V, VDS = 12 V; ID = 30 A

Gate Resistance

TA = 25°C

1.3

SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 5)

Turn−On Delay Time

td(ON)

VGS = 4.5 V, VDD = 12 V, ID = 15 A,

RG = 3.0 W

16.9

Rise Time

42.3

Turn−Off Delay Time

td(OFF)

46.3

Fall Time

30.9

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 5)

Turn−On Delay Time

td(ON)

VGS = 11.5 V, VDD = 12 V,

ID = 15 A, RG = 3.0 W

10.9

Rise Time

33.2

Turn−Off Delay Time

td(OFF)

58.3

Fall Time

23.3

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 2.0 A

TJ = 25°C

0.35

0.6

TJ = 125°C

0.27

Reverse Recovery Time

tRR

VGS = 0 V, dIS/dt = 100 A/ms,

IS = 30 A

66.7

Charge Time

33.1

Discharge Time

33.6

Reverse Recovery Charge

QRR

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

5. Pulse Test: pulse width

v 300 ms, duty cycle v 2%.

6. Switching characteristics are independent of operating junction temperatures.

NTMFS4H01NF Datasheet(PDF) 2 Page - ON Semiconductor

NTMFS4H01NF Datasheet(HTML) 2 Page - ON Semiconductor

Html Pages

1 2 3 4 5 6 7

Datasheet Download

Link URL