SWITCHMODEt Series

NPN Silicon Power Transistors

The BUS50 transistor is designed for low voltage, high–speed,

power switching in inductive circuits where fall time is critical. It is

particularly suited for battery SWITCHMODE applications such as:

300 ns Inductive Fall Time –25

_C (Typ)

MAXIMUM RATINGS

Rating

Symbol

BUS50

Unit

Collector–Emitter Voltage

125

Vdc

Collector–Emitter Voltage

200

Vdc

Emitter Base Voltage

7

Vdc

Collector Current — Continuous

— Peak (1)

— Overload

70

140

Adc

Base Current — Continuous

— Peak (1)

20

Adc

Derate above 25

_C

350

200

2

Watts

W/

_C

Operating and Storage Junction

Temperature Range

–65 to +200

_C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

0.5

_C/W

Maximum Lead Temperature

for Soldering Purposes:

1/8

″ from Case for 5 Seconds

275

_C

(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle

x10%.

ON Semiconductort

© Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 9

1

Publication Order Number:

BUS50/D

BUS50

70 AMPERES

NPN SILICON

POWER TRANSISTOR

125 VOLTS (BVCEO)

350 WATTS

200 V (BVCES)

CASE 197A–05

TO–204AE