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100323F Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # 100323F
Description  Low Power Hex Bus Driver
PDF  8 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

100323F Datasheet(HTML) 3 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature
−65˚C to +150˚C
Maximum Junction Temperature
Ceramic
+175˚C
V
EE Pin Potential to Ground Pin
−7.0V to +0.5V
Input Voltage (DC)
V
EE to +0.5V
Output Current (DC Output High)
−50 mA
ESD
≥2000V
Recommended Operating
Conditions
Case Temperature
Military
−55˚C to +125˚C
Supply Voltage (V
EE)
−5.7V to −4.2V
Note 1: Absolute maximum ratings are values beyond which the device may
be damaged or have its useful life impaired. Functional operation under these
conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE = −4.2V to −5.7V, VCC = VCCA = GND, TC = −55˚C to +125˚C
Symbol
Parameter
Min
Max
Units
T
C
Conditions
Notes
V
OH
Output HIGH
−1025
−870
mV
0˚C to +125˚C
V
IN = VIH (max)
Loading with
(Notes 3, 4, 5)
Voltage
−1085
−870
mV
−55˚C
or V
IL (min)
25
Ω to −2.0V
V
OHC
Output HIGH
−1035
mV
0˚C to +125˚C
V
IN = VIH (min)
or V
IL (max)
Loading with
25
Ω to −2.0V
(Notes 3, 4, 5)
Voltage
−1085
mV
−55˚C
V
OLC
Output LOW
−1610
mV
0˚C to +125˚C
Voltage
−1555
MV
−55˚C
V
OLZ
Cut-Off LOW
−1950
mV
0˚C to +125˚C
V
IN = VIH (min)
Loading with
(Notes 3, 4, 5)
Voltage
−1850
−55˚C
or V
IL (max)
25
Ω to −2.0V
V
IH
Input HIGH
−1165
−870
mV
−55˚C to +125˚C
Guaranteed HIGH Signal
(Notes 3, 4, 5, 6)
Voltage
for All Inputs
V
IL
Input LOW
−1830
−1475
mV
−55˚C to +125˚C
Guaranteed LOW Signal
(Notes 3, 4, 5, 6)
Voltage
for All Inputs
I
IL
Input LOW
Current
0.50
µA
−55˚C to +125˚C
V
EE = 4.2V, VIN = VIL (min)
(Notes 3, 4, 5)
I
IH
Input HIGH
240
µA
0˚C to +125˚C
V
EE = −5.7V, VIN = VIH (max)
(Notes 3, 4, 5)
Current
340
µA
−55˚C
I
EE
Power Supply
Inputs Open
Current
−155
−53
mA
−55˚C to +125˚C
V
EE = −4.2V to −5.7V
(Notes 3, 4, 5)
Note 3: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing VOH/VOL.
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