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STB1132 Datasheet(PDF) 2 Page - AUK corp |
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STB1132 Datasheet(HTML) 2 Page - AUK corp |
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2 / 3 page ![]() KST-8001-002 2 STB1132 Absolute maximum ratings (Ta=25 °C) Characteristic Symbol Ratings Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -32 V Emitter-Base voltage VEBO -5 V Collector current IC -1 A PC 0.5 Collector dissipation PC* 2 W Junction temperature Tj 150 °C Storage temperature Tstg -55~150 °C * : When mounted on 40×40×0.8mm ceramic substate Electrical Characteristics (Ta=25 °C) Characteristic Symbol Test Condition Min. Typ. Max. Unit Collector-Base breakdown voltage BVCBO IC=-50µA, IE=0 -40 - - V Collector-Emitter breakdown voltage BVCEO IC=-1mA, IB=0 -32 - - V Emitter-Base breakdown voltage BVEBO IE=-50µA, IC=0 -5 - - V Collector cut-off current ICBO VCB=-20V, IE=0 - - -0.1 µA Collector cut-off current ICES VCE=-30V, IC=0 - - -0.1 µA Emitter cut-off current IEBO VEB=-4V, IC=0 - - -0.1 µA DC current gain hFE * VCE=-3V, IC=-0.1A 100 - 320 - Collector-Emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA - -0.2 -0.8 V Transition frequency fT VCE=-5V, IC=-50mA, f=30MHz - 150 - MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz - 20 30 pF * : hFE rank / O : 100 ~ 200, Y : 160 ~ 320 |
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