If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Storage Temperature (T

−65˚C to +150˚C

Maximum Junction Temperature (T

Ceramic

+175˚C

V

−7.0V to +0.5V

Input Voltage (DC)

V

Output Current (DC Output HIGH)

−50 mA

ESD (Note 3)

≥2000V

Recommended Operating

Conditions

Case Temperature (T

Military

−55˚C to +125˚C

Supply Voltage (V

−5.7V to −4.2V

Note 2: Absolute maximum ratings are those values beyond which the de-

vice may be damaged or have its useful life impaired. Functional operation

under these conditions is not implied.

Note 3: ESD testing conforms to MIL-STD-883, Method 3015.

Military Version

DC Electrical Characteristics

V

Symbol

Parameter

Min

Max

Units

T

C

Conditions

Notes

V

OH

Output HIGH Voltage

−1025

−870

mV

0˚C to

V

or V

Loading with

50

Ω to −2.0V

1, 2, 3

+125˚C

−1085

−870

mV

−55˚C

V

OL

Output LOW Voltage

−1830 −1620

mV

0˚C to

+125˚C

−1830 −1555

mV

−55˚C

V

OHC

Output HIGH Voltage

−1035

mV

0˚C to

V

or V

Loading with

50

Ω to −2.0V

1, 2, 3

+125˚C

−1085

mV

−55˚C

V

OLC

Output LOW Voltage

−1610

mV

0˚C to

+125˚C

−1555

mV

−55˚C

V

IH

Input HIGH Voltage

−1165

−870

mV

−55˚C to

Guaranteed HIGH Signal for All Inputs

1, 2, 3, 4

+125˚C

V

IL

Input LOW Voltage

−1830 −1475

mV

−55˚C to

Guaranteed LOW Signal for All Inputs

1, 2, 3, 4

+125˚C

I

IL

Input LOW Current

0.50

µA

−55˚C to

V

1, 2, 3

+125˚C

V

I

IH

Input HIGH Current

240

µA

0˚C to

V

V

1, 2, 3

+125˚C

340

µA

−55˚C

I

EE

Power Supply Current

−55˚C to

Inputs Open

−100

−35

mA

+125˚C

V

1, 2, 3

−105

−35

V

Note 4: F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately

without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case

condition at cold temperatures.

Note 5: Screen tested 100% on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.

Note 6: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.

Military Version

AC Electrical Characteristics

V

Symbol

Parameter

T

T

T

Units

Conditions

Notes

Min

Max

Min

Max

Min

Max

t

PLH

Propagation Delay

0.50

2.70

0.50

2.30

0.50

2.80

ns

Figures 1, 2, 3

(Notes 8, 9,

10, 12)

t

PHL

D

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