Electronic Components Datasheet Search
  English  ▼

X  

NTMFS4C01N Datasheet(PDF) 2 Page - ON Semiconductor

Part # NTMFS4C01N
Description  Single N-Channel Field Effect Transistor
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

NTMFS4C01N Datasheet(HTML) 2 Page - ON Semiconductor

  NTMFS4C01N Datasheet HTML 1Page - ON Semiconductor NTMFS4C01N Datasheet HTML 2Page - ON Semiconductor NTMFS4C01N Datasheet HTML 3Page - ON Semiconductor NTMFS4C01N Datasheet HTML 4Page - ON Semiconductor NTMFS4C01N Datasheet HTML 5Page - ON Semiconductor NTMFS4C01N Datasheet HTML 6Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
NTMFS4C01N
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
16.3
mV/°C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V,
VDS = 24 V
TJ = 25 °C
1
mA
TJ = 125°C
100
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = 20 V
100
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 250 mA
1.3
2.2
V
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
5.8
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 30 A
0.71
0.9
mW
VGS = 4.5 V
ID = 30 A
0.94
1.2
Forward Transconductance
gFS
VDS = 3 V
ID = 30 A
183
S
Gate Resistance
RG
TA = 25 °C
1.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 15 V
10144
pF
Output Capacitance
COSS
5073
Reverse Transfer Capacitance
CRSS
148
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 15 V; ID = 30 A
63
nC
Threshold Gate Charge
QG(TH)
18
Gate−to−Source Charge
QGS
29
Gate−to−Drain Charge
QGD
13
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 15 V,
ID = 30 A
139
nC
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
td(ON)
VGS = 4.5 V, VDS = 15 V, ID = 15 A,
RG = 3.0 W
29
ns
Rise Time
tr
68
Turn−Off Delay Time
td(OFF)
53
Fall Time
tf
36
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.73
1.1
V
TJ = 125°C
0.55
Reverse Recovery Time
tRR
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
87
ns
Charge Time
ta
43
Discharge Time
tb
44
Reverse Recovery Charge
QRR
147
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.



Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com