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MBRS320P Datasheet(PDF) 2 Page - ON Semiconductor

Part # MBRS320P
Description  Surface Mount Schottky Power Rectifier
PDF  4 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MBRS320P Datasheet(HTML) 2 Page - ON Semiconductor

  MBRS320P Datasheet HTML 1Page - ON Semiconductor MBRS320P Datasheet HTML 2Page - ON Semiconductor MBRS320P Datasheet HTML 3Page - ON Semiconductor MBRS320P Datasheet HTML 4Page - ON Semiconductor  
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MBRS320P, MBRS330P, MBRS340P
www.onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
MBRS320PT3G
MBRS330PT3G
MBRS340PT3G
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
20
30
40
V
Average Rectified Forward Current
IF(AV)
3.0 @ TL = 110°C
4.0 @ TL = 105°C
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave,
single phase, 60 Hz)
IFSM
80
A
Operating Junction Temperature
TJ
− 65 to +150
°C
ISO 7637 Pulse #1
(100 V, 10
W)
5000
Pulses
ESD Ratings:
Machine Model = C
Human Body Model = 3B
> 400
> 8000
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Lead
RqJL
11
°C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1)
(iF = 3.0 A, TJ = 25°C)
VF
0.50
V
Maximum Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
iR
2.0
20
mA
1. Pulse Test: Pulse Width = 300
ms, Duty Cycle ≤ 2.0%.
TYPICAL ELECTRICAL CHARACTERISTICS
10
0.1
0.2
0
0.4
0.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
1
0.8
TJ = 25°C
TJ = 125°C
TJ = 100°C
TJ = −65°C
VF, MAXIMUM INSTANTANEOUS FORWARD VOLTAGE (V)
1.0
0.3
0.1
0.5
0.7
0.9
10
0.1
0.2
0
0.4
0.6
1
0.8
TJ = 25°C
TJ = 125°C
TJ = 100°C
TJ = −65°C
0.3
0.1
0.5
0.7
0.9
1.0
TJ = −40°C
TJ = −40°C



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