 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
DMN61D8L Datasheet(PDF) 3 Page - Diodes Incorporated |
|
|
|||||||||||||||||||||||||||||
DMN61D8L Datasheet(HTML) 3 Page - Diodes Incorporated |
|
|
3 / 9 page  DMN61D8L/LVT Document number: DS37630 Rev. 3 - 2 3 of 9 www.diodes.com April 2015 © Diodes Incorporated DMN61D8L/LVT Thermal Characteristics (SOT23) (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 390 mW Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 321 °C/W Total Power Dissipation (Note 6) PD 610 mW Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 208 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Thermal Characteristics (TSOT26) (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Total Power Dissipation (Note 5) PD 820 mW Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 154 °C/W Total Power Dissipation (Note 6) PD 1090 mW Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 116 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 10mA Zero Gate Voltage Drain Current IDSS 50 0.5 µA VDS = 60V, VGS = 0V VDS = 12V, VGS = 0V Gate-Source Leakage IGSS ±90 ±60 µA VGS = ±5V, VDS = 0V VGS = ±3V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(th) 1.3 2.0 V VDS = VGS, ID = 1mA Static Drain-Source On-Resistance RDS(ON) 1.1 1.4 1.8 2.4 Ω VGS =5V, ID = 0.15A VGS = 3V, ID = 0.15A Forward Transfer Admittance |Yfs| 80 ms VDS =12V, ID = 0.15A Diode Forward Voltage VSD 1.2 V VGS = 0V, IS = 0.15A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss 12.9 pF VDS = 12V, VGS = 0V f = 1.0MHz Output Capacitance Coss 17 pF Reverse Transfer Capacitance Crss 0.84 pF Total Gate Charge Qg 0.74 nC VGS = 5V, VDS = 12V, ID =150mA Gate-Source Charge Qgs 0.19 nC Gate-Drain Charge Qgd 0.16 nC Turn-On Delay Time tD(on) 131 ns VDD = 12V, VGS = 5V. Turn-On Rise Time tr 301 ns Turn-Off Delay Time tD(off) 582 ns Turn-Off Fall Time tf 440 ns Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
