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TMD27722 Datasheet(PDF) 5 Page - ams AG |
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TMD27722 Datasheet(HTML) 5 Page - ams AG |
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5 / 35 page  4 Copyright 2012, TAOS Inc. The LUMENOLOGY Company www.taosinc.com Operating Characteristics, VDD = 3 V, TA = 25 C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Active — LDR pulse off 195 250 IDD Supply current Wait state 90 μ A IDD Supply current Sleep state — no I2C activity 2.2 4 μ A V INT SDA output low voltage 3 mA sink current 0 0.4 V VOL INT, SDA output low voltage 6 mA sink current 0 0.6 V ILEAK Leakage current, SDA, SCL, INT pins −5 5 μ A ILEAK Leakage current, LDR pin −5 5 μ A V SCL SDA input high voltage TMD27721 0.7 VDD V VIH SCL, SDA input high voltage TMD27723 1.25 V V SCL SDA input low voltage TMD27721 0.3 VDD V VIL SCL, SDA input low voltage TMD27723 0.54 V ALS Characteristics, VDD = 3 V, TA = 25 C, AGAIN = 16 , AEN = 1 (unless otherwise noted) (Notes 1 ,2, 3) PARAMETER TEST CONDITIONS CHANNEL MIN TYP MAX UNIT Dark ADC count value Ee = 0, AGAIN = 120×, CH0 0 1 5 counts Dark ADC count value Ee = 0, AGAIN = 120×, ATIME = 0xDB (100 ms) CH1 0 1 5 counts ADC integration time step size ATIME = 0xFF 2.58 2.73 2.9 ms ADC number of integration steps 1 256 steps ADC counts per step ATIME = 0xFF 0 1024 counts ADC count value ATIME = 0xC0 0 65535 counts λp = 625 nm, Ee = 46.8 μW/cm2, CH0 4000 5000 6000 ADC count value λp = 625 nm, Ee = 46.8 μW/cm , ATIME = 0xF6 (27 ms) (Note 2) CH1 950 counts ADC count value λp = 850 nm, Ee = 61.7 μW/cm2, CH0 4000 5000 6000 counts λp = 850 nm, Ee = 61.7 μW/cm , ATIME = 0xF6 (27 ms) (Note 3) CH1 2900 ADC count value ratio: CH1/CH0 λp = 625 nm, ATIME = 0xF6 (27 ms) (Note 2) 0.152 0.19 0.228 ADC count value ratio: CH1/CH0 λp = 850 nm, ATIME = 0xF6 (27 ms) (Note 3) 0.43 0.58 0.73 λp = 625 nm, ATIME = 0xF6 (27 ms) CH0 107.2 R Irradiance responsivity λp = 625 nm, ATIME = 0xF6 (27 ms) (Note 2) CH1 20.4 counts/ (μW/ Re Irradiance responsivity λp = 850 nm, ATIME = 0xF6 (27 ms) CH0 81.5 (μW/ cm2) λp = 850 nm, ATIME = 0xF6 (27 ms) (Note 3) CH1 47.3 cm2) AGAIN = 1× and AGL = 1 0.16 Gain scaling, relative to 1× gain AGAIN = 8× and AGL = 0 7.2 8.0 8.8 × Gain scaling, relative to 1× gain setting AGAIN 16× and AGL 0 14 4 16 0 17 6 × setting AGAIN = 16× and AGL = 0 14.4 16.0 17.6 × AGAIN = 120× and AGL = 0 108 120 132 NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Red 625 nm and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production. 2. The 625 nm irradiance Ee is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength λ p = 625 nm and spectral halfwidth Δλ½ = 20 nm. 3. The 850 nm irradiance Ee is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength λ p = 850 nm and spectral halfwidth Δλ½ = 42 nm. TMD2772 DIGITAL ALS and PROXIMITY MODULE TAOS147E − DECEMBER 2012 |
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