BAR80 datasheet(2/4 Pages) INFINEON

Part #	BAR80

Description	Silicon RF Switching Diode

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 4 page

BAR80

Aug-17-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Reverse current

VR = 20 V

Forward voltage

IF = 100 mA

0.8

AC characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 3 V, f = 1 MHz

0.6

0.92

1.6

1.3

Forward resistance

IF = 5 mA, f = 100 MHz

0.5

0.7

Series inductance chip to ground

0.14

Application information

Shunt signal isolation

IF = 10 mA, f = 2 GHz, RG=RL=50

Shunt insertion loss

VR = 5 V, f = 2 GHz, RG=RL=50

0.15

Configuration of the shunt-diode

- A perfect ground is essential for optimum isolation

- The anode pins should be used as passage for RF

BAR80 Datasheet(PDF) 2 Page - Infineon Technologies AG