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BAT60 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BAT60 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 4 page ![]() Jun-15-2004 1 BAT60B... Silicon Schottky Diode • High current rectifier Schottky diode with very low VF drop (typ. 0.24 V at IF = 10mA) • For power supply applications • For clamping and protection in low voltage applications • For detection and step-up-conversion BAT60B 1 2 ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Package Configuration Marking BAT60B SOD323 single white/5 Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value Unit Diode reverse voltage1) VR 10 V Forward current IF 3 A Non-repetitive peak surge forward current (t ≤ 10ms) IFSM 5 Total power dissipation TS ≤ 28°C Ptot 1350 mW Junction temperature Tj 150 °C Operating temperature range Top -55 ... 125 Storage temperature Tstg -55 ... 150 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point2) RthJS ≤ 90 K/W 1For TA > 25 °C the derating of VR has to be considered. Please refer to curve Permissible reverse voltage. 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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