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BAW78M Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BAW78M Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 4 page  BAW78M Aug-21-2001 1 Silicon Switching Diode Switching applications High breakdown voltage VPW05980 1 2 3 5 4 Type Marking Pin Configuration Package BAW78M GDs 1 = A 2 = C 3 n.c. 4 n.c. 5 = C SCT595 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 400 V Peak reverse voltage VRM 400 Forward current IF 1 A Peak forward current IFM 1 Surge forward current, t = 1 s IFS 10 Total power dissipation, TS 110 °C Ptot 1 W Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 40 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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