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BC856T Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BC856T Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 6 page  Jan-08-2002 1 BC856T PNP Silicon AF Transistor Preliminary data For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 846T VPS05996 1 2 3 Type Marking Pin Configuration Package BC856AT BC856BT 3As 3Bs 1 = B 1 = B 2 = E 2 = E 3 = C 3 = C SC75 SC75 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 65 V Collector-base voltage VCBO 80 Collector-emitter voltage VCES 80 Emitter-base voltage VEBO 5 DC collector current IC 100 mA Peak collector current ICM 200 mA Total power dissipation , TS = 109 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 165 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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