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BC856U Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BC856U Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 6 page  BC856U Nov-29-2001 1 PNP Silicon AF Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package VPW09197 1 2 3 4 5 6 EHA07175 6 54 3 2 1 C1 B2 E2 C2 B1 E1 TR1 TR2 Type Marking Pin Configuration Package BC856U 3Ds 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Unit VCEO 65 Collector-emitter voltage V Collector-base voltage 80 VCBO Collector-emitter voltage VCES 80 Emitter-base voltage 5 VEBO DC collector current IC 100 mA Peak collector current 200 ICM 250 Total power dissipation, TS = 118 °C Ptot mW Junction temperature Tj 150 °C Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 130 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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