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PAM8603A Datasheet(PDF) 4 Page - Diodes Incorporated |
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PAM8603A Datasheet(HTML) 4 Page - Diodes Incorporated |
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4 / 16 page ![]() PAM8603A Document number: DSxxxxx Rev. 1 - 2 4 of 16 www.diodes.com November 2012 © Diodes Incorporated PAM8603A A Product Line of Diodes Incorporated Electrical Characteristics (@TA = +25°C, VDD = 5V, Gain = Maximum, RL = 8Ω, unless otherwise specified.) Parameter Symbol Test Conditions Min Typ Max Units Class D Stage Supply Voltage Range VDD 2.5 5.5 V Quiescent Current IQ No Load 10 15 mA Output Offset Voltage VOS No Load 10 50 mV Drain-Source On-State Resistance RDS(ON) IDS = 0.5A P MOSFET 0.35 Ω N MOSFET 0.25 Output Power PO THD+N = 10%, f = 1kHz, Anti-saturation off RL = 8Ω 1.55 1.70 W RL = 4Ω 2.85 3.00 THD+N = 1%, f = 1kHz, Anti-saturation off RL = 8Ω 1.10 1.35 RL = 4Ω 2.3 2.5 f = 1kHz, Anti-saturation on RL = 8Ω 1.0 RL = 4Ω 2.0 Total Harmonic Distortion Plus Noise THD+N RL = 8Ω, PO = 0.85W, f = 1KHz 0.08 % RL = 4Ω, PO = 1.75W, f = 1KHz 0.08 Power Supply Ripple Rejection PSRR Input AC-GND, f = 1KHz, VPP = 200mV, Gain =2V/V -70 dB Channel Separation CS PO = 1W, f = 1KHz -95 dB Oscillator Frequency fOSC 200 250 300 kHz Efficiency η PO = 1.7W, f =1 kHz, RL = 8Ω 85 89 % PO = 3.0W, f =1 kHz, RL = 4Ω 80 83 % Noise VN Input AC-GND A-Weighting 220 µV No A-Weighting 350 Signal Noise Ratio SNR f = 20 – 20kHz, THD = 1% 85 dB Earphone Stage Quiescent Current IQ No Load 4.5 7.5 mA Output Offset Voltage VOS No Load 2.5 V Output Power PO THD+N = 1%, RL = 32Ω, f = 1KHz 60 mW Total Harmonic Distortion Plus Noise THD+N RL = 32Ω, PO = 10mW, f = 1kHz 0.02 % Power Supply Ripple Rejection PSRR Input AC-GND, f = 1kHz, VPP = 200mV -75 dB Channel Separation CS PO = 1W, f = 1kHz -85 dB Noise VN Input AC-GND A-Weighting 40 µV No A-Weighting 70 Signal Noise Ratio SNR f = 20 – 20kHz, VO = 1VRMS 85 dB Control Section Under Voltage Lock-Out UVLO 2 Mute Current IMUTE VMUTE = 0V 1 3 mA Shutdown Current ISHDN VSHDN = 0V 1 µA Ear/ Line Threshold Voltage VTH 0.65 SHDN Input High VSH 1.2 SHDN Input High VSL 0.5 MUTE Input High VMH 1.2 MUTE Input High VML 0.5 Over Temperature Protection OTP 140 °C Over Temperature Hysteresis OTH 30 °C |
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