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BCR191S Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BCR191S Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 4 page ![]() BCR191S Dec-13-2001 1 PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two ( galvanic) internal isolated Transistors with good matching in one package Built in bias resistor (R1=22k, R2=22k) VPS05604 6 3 1 5 4 2 EHA07173 6 54 3 2 1 C1 B2 E2 C2 B1 E1 1 R R 2 R1 R 2 TR1 TR2 Type Marking Pin Configuration Package BCR191S WOs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage 50 V VCEO 50 Collector-base voltage VCBO 10 VEBO Emitter-base voltage Input on Voltage Vi(on) 30 100 mA DC collector current IC mW Ptot 250 Total power dissipation , TS = 115 °C Junction temperature 150 °C Tj -65 ... 150 Storage temperature Tstg Thermal Resistance Junction - soldering point 1) RthJS 140 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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