BCR503 datasheet(2/4 Pages) INFINEON

Part #	BCR503

Description	NPN Silicon Digital Transistor

PDF	4 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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2 / 4 page

BCR503

Jun-29-2001

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Values

Symbol

Unit

typ.

max.

min.

DC Characteristics

V(BR)CEO

Collector-emitter breakdown voltage

IC = 100 µA, IB = 0

V(BR)CBO

Collector-base breakdown voltage

IC = 10 µA, IB = 0

Collector cutoff current

VCB = 40 V, IE = 0

ICBO

100

Emitter cutoff current

VEB = 10 V, IC = 0

IEBO

3.5

DC current gain 1)

IC = 50 mA, VCE = 5 V

hFE

VCEsat

0.3

Collector-emitter saturation voltage1)

IC = 50 mA, IB = 2.5 mA

0.6

Input off voltage

IC = 100 µA, VCE = 5 V

Vi(off)

1.5

Input on Voltage

IC = 10 mA, VCE = 0.3 V

Vi(on)

1.8

1.5

2.2

Input resistor

2.9

0.9

R1/R2

1.1

Resistor ratio

AC Characteristics

MHz

100

Transition frequency

IC = 50 mA, VCE = 5 V, f = 100 MHz

1) Pulse test: t < 300

s; D < 2%

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