BCV49 datasheet(1/5 Pages) INFINEON

Part #	BCV49

Description	NPN Silicon Darlington Transistors

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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BCV29, BCV49

1

Jul-12-2001

NPN Silicon Darlington Transistors

For general AF applications

High collector current

High current gain

Complementary types: BCV28, BCV48 (PNP)

2

1

3

VPS05162

2

Type

Marking

Pin Configuration

Package

BCV29

BCV49

EF

EG

1 = B

2 = C

3 = E

4 = C

SOT89

Maximum Ratings

Parameter

Symbol

BCV29

BCV49

Unit

Collector-emitter voltage

VCEO

30

60

V

Collector-base voltage

VCBO

40

80

Emitter-base voltage

VEBO

10

DC collector current

IC

500

mA

Peak collector current

ICM

800

Base current

100

IB

Peak base current

IBM

200

Total power dissipation, TS = 130 °C

Ptot

1

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point1)

RthJS

20

K/W

1For calculation of RthJA please refer to Application Note Thermal Resistance

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BCV49 Datasheet(PDF) 1 Page - Infineon Technologies AG

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