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BDP949 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BDP949 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 4 page ![]() BDP947, BDP949 1 Aug-06-2001 Silicon NPN Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP948, BDP950 (PNP) VPS05163 1 2 3 4 Type Marking Pin Configuration Package BDP947 BDP949 BDP 947 BDP 949 1 = B 1 = B 2 = C 2 = C 3 = E 3 = E 4 = C 4 = C SOT223 SOT223 Maximum Ratings Parameter BDP 947 Symbol BDP 949 Unit V 60 Collector-emitter voltage VCEO 45 Collector-base voltage 45 60 VCBO VEBO 5 5 Emitter-base voltage 3 A DC collector current IC Peak collector current 5 ICM Base current IB 200 mA Peak base current IBM 500 Total power dissipation, TS = 99 °C W 3 Ptot °C Junction temperature 150 Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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