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BDP950 Datasheet(PDF) 4 Page - Infineon Technologies AG |
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BDP950 Datasheet(HTML) 4 Page - Infineon Technologies AG |
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4 / 4 page ![]() BDP948, BDP950 4 Jul-06-2001 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 0.0 0.1 0.2 0.3 0.4 V 0.6 VCEsat 0 10 1 10 2 10 3 10 4 10 mA 100°C 25°C -50°C Collector cutoff current ICBO = f (TA) VCB = 45V 0 20 40 60 80 100 120 °C 150 TA -1 10 0 10 1 10 2 10 3 10 4 10 5 10 nA max typ Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 VBEsat 0 10 1 10 2 10 3 10 4 10 mA -50°C 25°C 100°C Collector current IC = f (VBE) VCE = 2V 0.0 0.2 0.4 0.6 0.8 1.0 V 1.3 VBE 0 10 1 10 2 10 3 10 4 10 mA -50°C 25°C 100°C |
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