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BDP951 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BDP951 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 4 page ![]() BDP951 ... BDP955 1 Aug-06-2001 NPN Silicon AF Power Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP952 ... BDP956 (PNP) VPS05163 1 2 3 4 Type Marking Pin Configuration Package BDP951 BDP953 BDP955 BDP 951 BDP 953 PDP 955 1 = B 1 = B 1 = B 2 = C 2 = C 2 = C 3 = E 3 = E 3 = E 4 = C 4 = C 4 = C SOT223 SOT223 SOT223 Maximum Ratings Parameter BDP 951 Symbol Unit BDP 955 BDP 953 80 100 VCEO Collector-emitter voltage 120 V Collector-base voltage VCBO 100 120 140 Emitter-base voltage VEBO 5 5 5 3 A DC collector current IC Peak collector current 5 ICM Base current IB 200 mA 500 IBM Peak base current Total power dissipation, TS = 99 °C Ptot W 3 Junction temperature Tj 150 °C -65 ... 150 Storage temperature Tstg Thermal Resistance Junction - soldering point1) RthJS 17 K/W 1For calculation of RthJA please refer to Application Note Thermal Resistance |
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