BFG19 datasheet(1/6 Pages) INFINEON

Part #	BFG19

Description	NPN Silicon RF Transistor

PDF	6 Pages

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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BFG 19S

Oct-26-1999

1

NPN Silicon RF Transistor

For low noise, low distortion broadband

amplifiers in antenna and

telecommunication systems up to 1.5 GHz

at collector currents from 10 mA to 70 mA

VPS05163

1

2

3

4

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFG 19S

BFG19S

1 = E

2 = B

3 = E

4 = C

SOT-223

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCEO

15

V

Collector-emitter voltage

VCES

20

Collector-base voltage

VCBO

20

Emitter-base voltage

VEBO

3

Collector current

IC

100

mA

Base current

IB

12

Total power dissipation

, TS 75 °C 1)

Ptot

1

W

Junction temperature

Tj

150

°C

Ambient temperature

TA

-65 ... 150

Storage temperature

Tstg

-65 ... 150

Thermal Resistance

Junction - soldering point

RthJS

75

K/W

1TS is measured on the collector lead at the soldering point to the pcb

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BFG19 Datasheet(PDF) 1 Page - Infineon Technologies AG

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