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BFP136 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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BFP136 Datasheet(HTML) 1 Page - Infineon Technologies AG |
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1 / 7 page  BFP136W Jun-22-2001 1 NPN Silicon RF Transistor For power amplifier in DECT and PCN systems fT = 5.5GHz Gold metalization for high reliability VPS05605 4 2 1 3 ESD : Electrostatic discharge sensitive device, observe handling precaution! Type Marking Pin Configuration Package BFP136W PAs 1 = E 2 = C 3 = E 4 = B SOT343 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 12 V Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 150 mA Base current IB 20 Total power dissipation TS 60°C 1) Ptot 1000 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Thermal Resistance Junction - soldering point 2) RthJS 90 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For calculation of RthJA please refer to Application Note Thermal Resistance |
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