BFP193 datasheet(3/7 Pages) INFINEON

Part #	BFP193

Description	NPN Silicon RF Transistor

PDF	7 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 7 page

BFP193

Aug-09-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC characteristics (verified by random sampling)

Transition frequency

IC = 50 mA, VCE = 8 V, f = 500 MHz

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

0.6

0.9

Collector-emitter capacitance

VCE = 10 V, f = 1 MHz

Cce

0.25

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

1.8

Noise figure

IC = 10 mA, VCE = 8 V, ZS = ZSopt ,

f = 900 MHz

f = 1.8 GHz

1.3

2.1

Power gain, maximum available 1)

IC = 30 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt ,

f = 900 MHz

f = 1.8 GHz

Gma

17.5

11.5

Transducer gain

IC = 30 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

|S21e|2

14.5

8.5

1Gma = |S21 / S12| (k-(k2-1)1/2)

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