BFP196W

Jun-22-2001

1

NPN Silicon RF Transistor

For low noise, low distortion broadband

amplifiers in antenna and telecommunications

systems up to 1.5 GHz at collector currents from

20 mA to 89 mA

Power amplifier for DECT and PCN systems

F = 1.5 dB at 900 MHz

VPS05605

4

2

1

3

ESD

: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP196W

RIs

1 = E

2 = C

3 = E

4 = B

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

12

V

Collector-emitter voltage

20

Collector-base voltage

20

Emitter-base voltage

2

Collector current

100

mA

Base current

12

Total power dissipation

700

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

115

K/W