BFP460

Jun-14-2004

1

NPN Silicon RF Transistor*

• For low voltage / low current applications

• Ideal for VCO modules and low noise amplifiers

• Low noise figure: 1.1 dB at 1.8 GHz

• Excellent ESD performance

* Short-term description

VPS05605

4

2

1

3

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP460

ABs

1 = E 2 = C 3 = E 4=B

-

-

SOT343

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

4.5

4.2

V

Collector-emitter voltage

15

Collector-base voltage

15

Emitter-base voltage

1.5

Collector current

50

mA

Base current

5

200

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

≤ 250

K/W

2TS is measured on the collector lead at the soldering point to the pcb