BFP540F

Jan-28-2004

1

NPN Silicon RF Transistor

• For highest gain low noise amplifier

at 1.8 GHz

Noise Figure F = 0.9 dB

• Gold metallization for high reliability

• SIEGET 45 - Line

TSFP-4

1

2

4

3

A T s

1

2

3

4

d i r e c t i o n o f u n r e e l i n g

t o p v i e w

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Type

Marking

Pin Configuration

Package

BFP540F

ATs*

1=B

2=E

3=C

4=E

-

-

TSFP-4

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-emitter voltage

4.5

V

Collector-emitter voltage

14

Collector-base voltage

14

Emitter-base voltage

1

Collector current

80

mA

Base current

8

250

mW

Junction temperature

150

°C

Ambient temperature

-65 ... 150

Storage temperature

-65 ... 150

Thermal Resistance

Parameter

Symbol

Value

Unit

≤ 280

K/W

1TS is measured on the collector lead at the soldering point to the pcb