BFR35AP datasheet(3/3 Pages) INFINEON

Part #	BFR35AP

Description	NPN Silicon RF Transistor

PDF	3 Pages

Scroll/Zoom	100%

Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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3 / 3 page

Aug-01-2001

BFR35AP

Electrical Characteristics

Parameter

Symbol

Values

Unit

min.

typ.

max.

AC Characteristics

Transition frequency

IC = 15 mA, VCE = 8 V, f = 500 MHz

3.5

GHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Ccb

0.38

0.6

Collector emitter capacitance

VCE = 10 V, f = 1 MHz

Cce

0.2

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Ceb

0.7

Noise figure

IC = 2 mA, VCE = 6 V, ZS = ZSopt,

f = 900 MHz

f = 1.8 GHz

1.8

2.9

Power gain, maximum available1)

IC = 15 mA, VCE = 8 V, ZS = ZSopt,

ZL = ZLopt, f = 900 MHz

f = 1.8 GHz

Gma

9.5

Transducer gain

IC = 15 mA, VCE = 8 V, ZS = ZL = 50,

f = 900 MHz

f = 1.8 GHz

|S21e|2

12.5

1Gma = |S21/S12| (k-(k2-1)1/2)

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